
Publication date: May 2005 SJC00336AED
Silicon PNP epitaxial planar type
For high frequency amplifi cation
High transition frequency f
High transition frequency f
High transition frequency f
T
High transition frequency f
Optimum for high-density mounting and downsizing of the equipment for
Optimum for high-density mounting and downsizing of the equipment for
Ultraminiature leadless package
Absolute Maximum Ratings
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector power dissipation
Electrical Characteristics
Electrical Characteristics
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Reverse transfer impedance
Reverse transfer capacitance (Common emitter)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Unit: mm
1: Base
2: Emitter
3: Collector ML3-N2 Package
0.60±0.05
1.00±0.05
2
1
3
0.39
+0.01
−0.03
0.25±0.05
0.25±0.05
0.50±0.05
0.65±0.01
0.15±0.05
2
1
0.35±0.01
0.05±0.03
0.05±0.03
3
This product complies with the RoHS Directive (EU 2002/95/EC).
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