
Publication date: May 2006 SJC00344AED
Silicon NPN epitaxial planar type
For low frequency amplifi cation
Complementary to 2SB0621 (2SB621)
Large collector power dissipation P
Large collector power dissipation P
Low collector-emitter saturation voltage V
Low collector-emitter saturation voltage V
Absolute Maximum Ratings
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector power dissipation
Electrical Characteristics
Electrical Characteristics
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Note) The part number in the parenthesis shows conventional part number.
Unit: mm
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
5.0±0.2
0.7±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
1 2
3
+0.6
–0.2
4.0±0.2
5.1±0.212.9±0.5
2.3±0.2
0.7±0.2
This product complies with the RoHS Directive (EU 2002/95/EC).
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