Panasonic UP0KG8D Uživatelský manuál stáhnout pdf

Multi Chip Discrete

Publication date: November 2005 SJJ00334AED 1

UP0KG8D

Silicon epitaxial planar type (SBD)

Silicon PNP epitaxial planar type (Tr)

For digital circuits

 Features

 Two elements incorporated into one package (SBD + Tr)

 Costs can be reduced through downsizing of the equipment and reduction of

the number of parts

 Basic Part Number

 MA2SD24 + UNR31A3

 Absolute Maximum Ratings T

= 25°C

Parameter Symbol Rating Unit

SBD

Reverse voltage V

20 V

Repetitive peak reverse voltage V

RRM

20 V

Forward current (Average) I

F(AV)

200 mA

Peak forward current I

300 mA

Non-repetitive peak forward

surge current

FSM

1 A

Collector-base voltage

(Emitter open)

CBO

-50

Collector-emitter voltage

(Base open)

CEO

-50

Collector current I

-80

Overall

Total power dissipation P

125 mW

Junction temperature T

125

°C

Storage temperature T

stg

–55 to +125

°C

Note)

: 50 Hz sine wave 1 cycle (Non-repetitive peak current)

Marking Symbol: 6K

Internal Connection

Unit: mm

1: Anode 4: Collector

2: Base 5: Cathode

3: Emitter SSMini5-F2 Package

–0.02

+0.05

0.20(0.30)

(0.50)

1 2 3

5 4

(0.50)

1.60±0.050.55±0.05

0 to 0.02

0.10 max

1.20±0.05

1.00±0.05

1.60±0.05

0.10±0.02

(0.20)

Display at No.1 lead

1 2

SBD

1 2 3 4 5

Shrnutí obsahu

Strany 1 - Multi Chip Discrete

Multi Chip Discrete Publication date: November 2005 SJJ00334AED 1UP0KG8DSilicon epitaxial planar type (SBD)Silicon PNP epitaxial planar type (Tr)For

Strany 2 - UP0KG8D

UP0KG8D 2 SJJ00334AED  Electrical Characteristics Ta = 25°C±3°C SBDParameter Symbol Conditions Min Typ Max UnitForward voltage VFIF = 200 mA 0.50

Strany 3 - UP0KG8D

UP0KG8D SJJ00334AED 3 PT  Ta IF  VF IR  Ta CD  VRCommon characteristics chartCharacteristics charts of SBD0 40 1208001204080UP0KG8D_PT-TaT

Strany 4

UP0KG8D 4 SJJ00334AED IC  VCE VCE(sat)  IC hFE  IC Cob  VCB IO  VIN VIN  IOCharacteristics charts of Tr0 −4 −8 −12−40−80−120−1600IB = −1

Strany 5

Request for your special attention and precautions in using the technical information andsemiconductors described in this book(1)If any of the produc

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