Panasonic 2SC3934 Uživatelský manuál stáhnout pdf

Transistors

Publication date: February 2003 SJC00144BED

2SC3934

Silicon NPN epitaxial planar type

For high-frequency wide-band low-noise amplification

■ Features

• High transition frequency f

• S-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing

■ Absolute Maximum Ratings T

= 25°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base cutoff current (Emitter open)

CBO

= 10 V, I

= 0 100 nA

Emitter-base cutoff current (Collector open)

EBO

= 2 V, I

= 01µA

Forward current transfer ratio h

= 10 V, I

= 10 mA 40 

Transition frequency f

= 10 V, I

= 10 mA, f = 0.8 GHz 4.5 GHz

Collector output capacitance C

= 10 V, I

= 0, f = 1 MHz 1.2 pF

(Common base, input open circuited)

Forward transfer gain S

21e



= 10 V, I

= 20 mA, f = 0.8 GHz 9 12 dB

Maximum unilateral power gain G

= 10 V, I

= 20 mA, f = 0.8 GHz 12 14 dB

Noise figure NF V

= 10 V, I

= 5 mA, f = 0.8 GHz 1.3 2.5 dB

■ Electrical Characteristics T

= 25°C ± 3°C

Unit: mm

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

CBO

15 V

Collector-emitter voltage (Base open) V

CEO

12 V

Emitter-base voltage (Collector open) V

EBO

2.5 V

Collector current I

30 mA

Peak collector current I

50 mA

Collector power dissipation P

150 mW

Junction temperature T

150 °C

Storage temperature T

stg

−55 to +150 °C

Marking Symbol: 1U

2.1±0.1

1.3±0.1

0.3

+0.1

–0.0

2.0±0.2

1.25±0.10 (0.425)

(0.65)

0.2±0.1

0.9±0.10 to 0.1

0.9

+0.2

–0.1

0.15

+0.10

–0.05

5˚

10˚

1: Base

2: Emitter

3: Collector

EIAJ: SC-70

SMini3-G1 Package

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

This product complies with the RoHS Directive (EU 2002/95/EC).

1 2 3 4

Shrnutí obsahu

Strany 1 - Transistors

Transistors1Publication date: February 2003 SJC00144BED2SC3934Silicon NPN epitaxial planar typeFor high-frequency wide-band low-noise amplification F

Strany 2 - Collector current I

2SC39342SJC00144BEDVCE(sat)  IChFE  ICfT  ICPC  TaIC  VCEIC  VBECob  VCBNF  ICS11 , S22100.2− 0.20.4− 0.40.8− 0.8− 0.61.5−1.5−2−3−4−5−10234510

Strany 3 - SJC00144BED

2SC39343SJC00144BEDS11 , S22+90°+60°−60°+120°−120°+30°−30°+150°−150°±180° 0°−90°−30 5 15 2010−15−10 −25−201 000 MHzVCE = 10 VIC = 20 mAE : EarthS21S12

Strany 4

Request for your special attention and precautions in using the technical information andsemiconductors described in this book(1)If any of the produc

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